|
Photo
Transistor
Specifications;
SMR10PT941-TR
Absolute
Maximum
Ratings
(Ta=
25°C):
Power
Dissipation, Pd
= 75mW
Collector-to-emitter
Breakdown
Voltage, BVceo
= 30V (Vce
= 20V)
Emitter-to-collector
Breakdown
Voltage, BVeco
= 5V
Operating
temperature, Topr
= -25șC
to +85șC
Storage
temp., Tstg
= -25șC
to +85șC
Tsol
= 245șC
±5șC within
5sec. 260șC
(max.)
Electro-Optical
Characteristics
(Ta=
25°C):
Peak Wave
Length, lp
= 940nm
Input,
Collector
Light Current, Ic(on),
typical = 10.0mA,
(conditions;
Vce
= 5V, lp=940nm,
H = 1.0mW/cm2)
Output,
Collector
Dark Current, Iceo
= 100nA (max)
Rise
/ Fall Time;
Tr
= 15μsec, Tf
= 15μsec
(conditions;
Vce=5V,
Ic=1mA,
RL=
1KΩ,
DC = 1%)
View Angle 2qœ
= 105°
|